| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729111 | Materials Science in Semiconductor Processing | 2006 | 4 Pages |
Abstract
The formation of nano-structure on an amorphised Si surface is studied upon annealing by a nanosecond laser pulse of an excimer laser. The resulting structures are studied by means of the reflection high-energy electron diffraction technique and atomic force microscopy. Smoothing out of the post-implanted islands and then the formation of polycrystalline Si grains are observed in surfaces annealed with the energy density up to the threshold value.
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Authors
D. Klinger, E. Łusakowska, D. Żymierska,