| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729122 | Materials Science in Semiconductor Processing | 2006 | 4 Pages |
Abstract
Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency.
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Authors
Shuping Li, Zhilai Fang, Hangyang Chen, Jinchai Li, Xiaohong Chen, Xiaoli Yuan, Takashi Sekiguchi, Qiming Wang, Junyong Kang,