Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729125 | Materials Science in Semiconductor Processing | 2006 | 6 Pages |
Abstract
High-resolution photoinduced transient spectroscopy (HRPITS) has been applied to study electronic properties of point defects in semi-insulating (SI) InP obtained by iron diffusion during the high-temperature annealing in iron-phosphide (IP) ambience. A two-dimensional approach to the spectral analysis of the photocurrent decays recorded in a wide range of temperatures and a neural network method to extracting the parameters of defect centres are used. The defect structure of SI InP wafers annealed under the IP and pure phosphorus atmospheres is compared.
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Authors
P. Kamiński, R. Kozłowski, S. Strzelecka, M. Pawłowski, E. Wegner, M. Piersa,