| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729126 | Materials Science in Semiconductor Processing | 2006 | 4 Pages |
Abstract
We report on investigations of nonequilibrium carrier generation, recombination and transport in differently doped InP crystals by means of time resolved degenerative four-wave mixing technique. The role of deep traps in carrier diffusion and lifetime was monitored through a feedback effect of a space-charged field to carrier transport and provided a photoconductivity type of differently doped InP crystals. Fast transients were used to evaluate the concentration of residual defects in the crystals.
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Authors
N. Sun, K. Jarasiunas, M. Sudzius, A. Kadys, X. Zhou, T. Sun,