| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729128 | Materials Science in Semiconductor Processing | 2006 | 4 Pages |
Abstract
Defects constructing net-like cell structures in 4-in semi-insulating gallium arsenide single crystal were studied by the method of chemical etching, X-ray anomalous transmission topography, and transmission electron microscopy. The nature and the formation mechanism of these structures were analyzed. It is assumed that the cell structures are a cluster of small-angle grain boundaries caused by the movement and interaction of high density of dislocations, the cell wall is the typical small-angle grain boundary. The phase difference among the small-angle grain boundaries increases with the density of dislocations.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Weizhong Sun, Qiuyan Hao, Haiyun Wang, Caichi Liu, Yuesheng Xu, Yiqing Shi,