Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729129 | Materials Science in Semiconductor Processing | 2006 | 4 Pages |
Abstract
Surface topography of GaN layer grown on Si (1 1 1) using metalorganic chemical vapor deposition before and after etching were investigated by plan-view transmission electron microscopy and scanning electron microscopy. Different shape of etch pits appeared on GaN with different thickness, and typical pits which reflected the dislocation interaction always occurred at the junction of sub-grains. The mechanism was discussed.
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Authors
Liwei Zhao, Caichi Liu, Xiaoyun Teng, Shilong Sun, Wei Zhang, Junshan Zhu, Yuchun Feng, Baoping Guo,