Structural, optical and electrical properties of MgxZn1−xO ternary alloy films

The structural, optical and electrical properties of MgxZn1−xO (x=0.05–0.3) ternary alloy thin films deposited by the sol–gel method on the glass substrate were investigated. The presence of Mg in deposited samples was confirmed through EDAX. XRD spectra revealed that the deposited Mg doped ZnO films were polycrystalline in nature. The optical band gap of the films was tailored between 3.2 and 3.45 eV by varying Mg mole concentration between 0.05 and 0.3. I–V characteristics showed decrease in current with increase in the Mg mole concentration. These results explore the applicability of MgZnO to form effective and efficient heterostructures with ZnO as an active layer for efficient carrier confinement in light emitting devices.