| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729136 | Materials Science in Semiconductor Processing | 2009 | 5 Pages |
Abstract
Experimental results of the fabricated Schottky barrier diode on a GaSe:Gd substrate are presented. The electrical analysis of Au–Sb/p-GaSe:Gd structure has been investigated by means of current–voltage (I–V) and capacitance–voltage (C–V) measurements at 296 K temperature. The diode ideality factor and the barrier height have been obtained to be 1.07 and 0.85 eV, respectively, by applying a thermionic emission theory. At high currents in the forward direction, the series resistance effect has been observed. The series resistance has been determined from I–V measurements using Cheung's method.
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Authors
Songül Duman,