| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729164 | Materials Science in Semiconductor Processing | 2009 | 5 Pages |
Abstract
Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I–V characteristics. Analysis of I–V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.
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Authors
M.G. Mahesha, Kasturi V. Bangera, G.K. Shivakumar,