Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729167 | Materials Science in Semiconductor Processing | 2009 | 7 Pages |
Abstract
Fabrications of narrow electrode grooves for front electrodes on single crystalline silicon solar cells were examined using surface discharges, in which the electrode grooves were formed by etching a silicon nitride (SiN) film on substrates. The surface discharge could effectively etch the SiN film within 10Â s and that a high etching rate more than 1800Â nm/min was obtained. An optimum ratio of Ar gas, which was enough to maintain the formation of innumerable surface streamers, was 2.3 times larger than that of etching gas, and a short-term etching with the high discharge voltage was effective to narrow groove width.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Toshiyuki Hamada, Tatsuya Sakoda, Masahisa Otsubo,