Preparation and degradation of the optical properties of nano-, meso-, and macroporous silicon

In the work some peculiarities in formation of the porous silicon, its morphology and composition were investigated, as well as some optical properties of this material. Porous silicon was obtained on the substrates of single-crystalline Si as well as on the silicon structures with p–n junctions. In order to obtain nano-, meso- and macroporous silicon as well as multi-layered porous structures several technological parameters (were controlled) varied—orientation of the substrates, conductivity type and composition of the etchant. Correlation between photoluminescence intensity of the obtained samples and intensity of the absorption band in their IR spectra (the band at 616 cm−1) that is due to the presence of Si–Si bonds in porous layer was observed. The influence of the porous silicon storage in the air on the degradation of its photoluminescence parameters was also estimated.