Taguchi method-optimized sputter deposition of hydrogenated gallium-doped zinc oxide films in argon/hydrogen ambient

Transparent conductive films of hydrogenated gallium-doped zinc oxide (HGZO) were deposited on glass under various deposition conditions (ratio of H2 to Ar, RF power, sputtering pressure and time) by RF magnetron sputtering in Ar+H2 ambient at room temperature (RT). In this work, the Taguchi method was used to find optimal deposition conditions and it was found that sputtering time and ratio of H2 to Ar were significantly influencing parameters on figure of merit of HGZO films. For the HGZO film grown under the optimal condition, the highest figure of merit of 33.94×10−3 Ω−1, i.e. the lowest sheet resistance of 10.62 Ω/sq (ρ=3.40×10−4 Ω cm) and high transmittance of 90.03% were obtained. In this case, hall mobility and carrier concentration are 8.87 cm2 V−1 s−1 and 1.177×1021 cm−3, respectively.