Article ID Journal Published Year Pages File Type
729202 Materials Science in Semiconductor Processing 2015 5 Pages PDF
Abstract

NiO films were deposited by sputtering with a relatively high oxygen partial pressure, followed by subsequent annealing in air. The as-deposited film is amorphous. The amorphous film gradually turns to crystalline structure with the increase in annealing temperature. The film annealed at 673 K shows strong ferromagnetism at room temperature, whereas, there is no room-temperature ferromagnetic ordering for the as-deposited amorphous NiO film or the film after annealed at 873 K. The ferromagnetism is due to the finite size effect and the high Curie temperature above room temperature is associated with the interaction between ferromagnetic NiO crystalline nanoclusters and antiferromagnetic amorphous matrix.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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