Article ID Journal Published Year Pages File Type
729264 Materials Science in Semiconductor Processing 2015 4 Pages PDF
Abstract

We investigated the impedance parameters of cobalt–titanium (Co–Ti) multilayer thin films deposited on native oxidized Si (100) substrate under ultra-high vacuum (4×10−8 mbar) by magnetron sputtering at room temperature. Electrical properties of Co/Ti/Co multilayer films were analyzed depending on the thickness of Ti spacer layer with the impedance spectroscopy as a function of frequency. Co/Ti multilayer films exhibited dielectric relaxation in both real and imaginary part of dielectric constants at the kilohertz frequency region and piezoelectric properties at the megahertz frequency region. We determined that the fabricated multilayer films have complex and super imposed type behavior when DC conductivity is used at lower frequency, resonance event and relaxation properties.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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