A Monté Carlo simulation study of high-dose and low-energy boron implantation into LPCVD-NiDoS polycrystalline thin films

As previously found, the presence of nitrogen in the target is known to reduce boron penetration in the polycrystalline silicon films. This effect is significantly increased at high nitrogen concentrations. On the contrary, the characteristic fine-grained structure of these films, which corresponds to the presence of grains (G) and grain boundaries (GB), is known to enhance the opposite phenomenon. This last behavior is taken into consideration by assuming that the grain boundary plays an effective role in the scattering calculation process of the incident ions. In our analysis we postulate that: the incident ion, after interaction with GB, should only produce a change in direction and not a loss of its energy.