| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729300 | Materials Science in Semiconductor Processing | 2015 | 5 Pages |
Abstract
The barrier height of the manganite based p–n heterojunction is identified from the activation energy. The La0.35Pr0.32Ca0.33MnO3/Nb-doped SrTiO3 p–n heterojunction is fabricated by the pulse laser deposition technology. The junction shows good rectifying behavior which can be well described by the Shockley equation. A satisfactorily logarithmic linear dependence of resistance on temperature is observed, and also the relation between bias and activation energy (EA) deduced from the R−1/T curves is linear. As a result, the interfacial barrier of the heterojunction is obtained by extrapolating the Bias –EA plot to Y axis, which is 0.95 eV.
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Engineering
Electrical and Electronic Engineering
Authors
Mei Wang, Dengjing Wang, Junjie Ma, Ruwu Wang, Yunbao Li,