Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics

Enhancement-mode In0.53Ga0.47As n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), with barium zirconate titanate (BZT) and titanium dioxide (TiO2) high-κ materials prepared via the solution–gelation process as gate dielectrics, have been fabricated. The dielectric constants of BZT and TiO2 are 6.67 and 19.3, respectively. The In0.53Ga0.47As MOSFET with TiO2 exhibits better electrical characteristics than the In0.53Ga0.47As MOSFET with BZT. These characteristics include higher maximum drain current density, higher maximum transconductance, and smaller subthreshold swing.