Article ID Journal Published Year Pages File Type
729310 Materials Science in Semiconductor Processing 2015 6 Pages PDF
Abstract

Four sputtered oxide films (SiO2, Al2O3, Y2O3 and TiO2) along with their passivating amorphous InGaZnO thin film transistors (a-IGZO TFTs) were comparatively studied in this paper. The device passivated by an Al2O3 thin film showed both satisfactory performance (μFE=5.3 cm2/V s, Ion/Ioff>107) and stability, as was probably related to smooth surface of Al2O3 thin films. Although the performance of the a-IGZO TFTs with a TiO2 passivation layer was also good enough (μFE=3.5 cm2/V s, Ion/Ioff>107), apparent Vth shift occurred in positive bias-stress tests due to the abnormal interface state between IGZO and TiO2 thin films. Sputtered Y2O3 was proved no potential for passivation layers of a-IGZO TFTs in this study. Despite unsatisfactory performance of the corresponding a-IGZO TFT devices, sputtered SiO2 passivation layer might still be preferred for its high deposition rate and excellent transparency which benefit the mass production of flat panel displays, especially active-matrix liquid crystal displays.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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