Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729336 | Materials Science in Semiconductor Processing | 2007 | 6 Pages |
Abstract
By means of Tersoff and Morse potentials, a three-dimensional molecular dynamics simulation is performed to study atomic force microscopy cutting on silicon monocrystal surface. The interatomic forces between the workpiece and the pin tool and the atoms of workpiece themselves are simulated. Two partial edge dislocations are introduced into workpiece Si, it is found that the motion of dislocations does not occur during the atomic force microscopy cutting processing. Simulation results show that the shear stress acting on dislocations is far below the yield strength of Si.
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Authors
Q.H. Tang,