Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729337 | Materials Science in Semiconductor Processing | 2007 | 5 Pages |
Abstract
As-grown porous silicon prepared with ammonium sulfide pre-treated silicon show stable photoluminescence characteristics due to high Si–N/PS interface quality and less damage PS with Si–N passivation. After aging in air for 6 months, it shows much stronger photoluminescence intensity and stable wavelength due to higher Si–ON/PS interface quality and less damage of PS with Si–O–N passivation from the oxidation of Si–N.
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Authors
Ming-Kwei Lee, Hwai-Fu Tu,