Article ID Journal Published Year Pages File Type
729337 Materials Science in Semiconductor Processing 2007 5 Pages PDF
Abstract

As-grown porous silicon prepared with ammonium sulfide pre-treated silicon show stable photoluminescence characteristics due to high Si–N/PS interface quality and less damage PS with Si–N passivation. After aging in air for 6 months, it shows much stronger photoluminescence intensity and stable wavelength due to higher Si–ON/PS interface quality and less damage of PS with Si–O–N passivation from the oxidation of Si–N.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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