| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729393 | Materials Science in Semiconductor Processing | 2006 | 5 Pages |
Abstract
Relaxation of electrical defects in amorphous barium titanate thin films was studied by the thermally stimulated current (TSC) technique. We were able to detect at least three relaxation peaks in the TSC spectra. One is associated with activation energy of 0.65Â eV and is possibly related to electronic trap levels below the conduction band. Another one is associated with activation energy close to 1Â eV corresponding to the migration of positively charged oxygen vacancies within the films.
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Authors
F. El Kamel, P. Gonon, B. Yangui,