Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729394 | Materials Science in Semiconductor Processing | 2006 | 5 Pages |
Abstract
DC and AC electrical properties of amorphous barium titanate thin film capacitors have been investigated as a function of temperature. A clear correlation is found between the temperature dependence of DC leakage currents and the temperature variation of the AC loss peaks, showing that these measurement techniques are probing the same electrical defects. Using either of these two techniques in amorphous barium titanate, we were able to detect oxygen vacancies diffusion with activation energy around 1 eV, and electron traps at 0.3 and 0.4 eV.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
F. El Kamel, P. Gonon,