Article ID Journal Published Year Pages File Type
729400 Materials Science in Semiconductor Processing 2006 5 Pages PDF
Abstract

This study investigates the tensile-strained growth of LaAlO3 on SrTiO3(0 0 1) substrate by molecular beam epitaxy (MBE). Growth was controlled in situ by reflection high energy electron diffraction (RHEED). The characterization was carried out ex situ by photoemission and atomic force microscopy (AFM). Photoelectron spectroscopy (XPS) reveals the development of a TiOx-rich interface. Photoelectron diffraction (XPD) confirms that a 1.2-nm-thick pseudomorphic LaAlO3 film has been grown on SrTiO3(0 0 1) substrate with a perpendicular lattice parameter of 0.372±0.02 nm.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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