| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729401 | Materials Science in Semiconductor Processing | 2006 | 5 Pages |
Abstract
The structural and electrical characteristics of a novel nanolaminate Al2O3/ZrO2/Al2O3 high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al2O3 (2.5 nm)/ZrO2 (4.5 nm)/Al2O3 (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C–V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface.
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Authors
Zengfeng Di, Miao Zhang, Weili Liu, Qinwo Shen, Zhitang Song, Chenglu Lin, Anping Huang, Paul K. Chu,