Article ID Journal Published Year Pages File Type
729471 Materials Science in Semiconductor Processing 2014 7 Pages PDF
Abstract

Crystals of tungsten trioxide (WO3) have been grown from tungsten hexachloride and deposited on a glass substrate at 350 °C by the Spray Pyrolysis Technique. The obtained WO3 films were subjected to Zinc and Indium doping under vacuum at 350 °C. The structural features of the obtained crystals were investigated using X-ray diffraction and atomic force microscopy. The results showed that the behavior of the doped layers versus doping rate were drastically different for Zn and In. Deepened nano-scale and quantum-linked lattice disorder, expressed in terms of Urbach tailing have been carried out. Elements of explanation have been presented and discussed.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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