InN and ln1−XGaX N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings

Hall mobilities of InN and In1−xGaxN are calculated by an iterative method. All important scattering mechanisms are taken into account in these calculations. The effect of dislocation scattering on Hall mobility of InN at a carrier concentration of 10 1717 cm −3−3 is investigated in the temperature range of 30–600 K. Hall mobility of InN decreased with increasing dislocation density. Both dislocation and alloy disorder scatterings dependence on mobility in In1−xGaxN are examined as x (composition) varies from 0.0 to 1.0 at 77 K and 300 K. We observed that the Hall mobility of In1−xGaxN decreases up to x=0.3 at 300 K and up to x=0.5 at 77 K because of dislocation scattering.