Sm2O3 gate dielectric on Si substrate

High dielectric constant (κ) materials have become a necessity for down scaling of metal-oxide-semiconductor (MOS) based devices. Rare-earth oxides have been studied as alternative dielectric material to replace SiO2 gate for future Si-based technology due to their excellent dielectric properties and thermodynamic stability with Si. This paper reviews reasons behind the use of rare-earth oxides as alternative high-κ dielectric materials and their requirements. Of these rare-earth oxides, Sm2O3 is one of the potential candidates that capture the attention of researchers owing to its intrinsic properties. These properties have been reviewed in comparison with the properties of other rare-earth oxides. Various deposition methods of Sm2O3 thin films on Si are also described, compared, and related to their physical and electrical properties. Based on the outcome of this review, Sm2O3 thin film has a huge potential to be the alternative dielectric for future MOS based devices when the listed challenges are resolved.