Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729623 | Materials Science in Semiconductor Processing | 2010 | 4 Pages |
Abstract
Light extraction efficiency of GaN-based light emitting diodes (LEDs) has improved significantly by using ITO/ZnO layer texturing. We have deliberately designed and successfully fabricated GaN-based LEDs having one and two interfaces of ITO/ZnO layer texturing in the device structure. It was found that the light extraction efficiencies of one and two interfaces of ITO/ZnO-layer texturing LEDs were 22.29% and 35.54% at 20 mA of current injection, respectively. Creating the chances of multiple light scattering at more than one interface is playing a major role to enhance light output power of the device. The source of the enhanced light output power is also discussed.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Periyayya Uthirakumar, Ji Hye Kang, Beo Deul Ryu, Chang-Hee Hong,