| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729636 | Materials Science in Semiconductor Processing | 2010 | 5 Pages |
Tetrapod-shaped zinc oxide whisker-film emitters were fabricated on indium tin oxide glass substrates using a screen-printing method. The influence of annealing temperature on field emission of tetrapod-whisker ZnO-based emitters was investigated. X-ray diffraction and scanning electronic microscopy were applied to characterize the structure and the surface morphology of the deposited films. It was found that ZnO-based emitters annealed at 250 °C have the best field emission properties with the lowest turn-on field of 2.6 V/μm at a current density of 1 μA/cm2, the lowest threshold field of 5.2 V/μm at a current density of 1 mA/cm2 and high field emission enhancement factor of 4129. Moreover, films with homogeneous, fine and dense light spots with low emission current fluctuation of 1.7% were obtained from samples annealed at 250 °C.
► TW-ZnO-based emitters fabricated by screen-printing method. ► Annealing temperature influences field emission properties. ► The highest field emission enhancement factor was obtained at about 250 °C annealing. ► Annealing temperature influences light spots density and emission current fluctuation.
