| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729872 | Materials Science in Semiconductor Processing | 2008 | 5 Pages |
Abstract
Oxidation characteristics of Si0.85Ge0.15 nanowires were investigated using transmission electron microscopy (TEM) analyses. Si0.85Ge0.15 nanowires were grown in a tube furnace by vapor–liquid–solid (VLS) method and thermally oxidized at 925 °C for 1–8 h. After oxidation, oxide thicknesses were measured using TEM images. Si0.85Ge0.15 nanowires showed a thicker oxide than Si nanowires, for the whole range of oxidation time. The oxidation rate of Si0.85Ge0.15 nanowires significantly decreased in nanowires with diameters less than 150 nm. Long-term oxidation in Si0.85Ge0.15 nanowire resulted in the oxidation of germanium atoms.
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Authors
Sang-Yeon Kim, Sun-Wook Kim, Hyun-Jin Chang, Han-Kyu Seong, Heon-Jin Choi, Dae-Hong Ko,