| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729893 | Materials Science in Semiconductor Processing | 2008 | 4 Pages |
Abstract
The impact of metallic impurities on the carrier lifetime in Ge is studied by using microwave probed photo-conductivity relaxation and photo-conductivity quenching spectroscopy techniques. Carrier decay transients are examined using a wide range of excitation regimes. Spectrally resolved and spectrum-integrated photo-quenching characteristics are examined to reveal the involved carriers and competing recombination centres.
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Authors
E. Gaubas, A. Uleckas, J. Vanhellemont, W. Geens,