Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729895 | Materials Science in Semiconductor Processing | 2008 | 5 Pages |
Abstract
A thin cobalt layer is deposited by electron beam evaporation onto a germanium substrate after an in situ cleaning annealing at 400 or 700 °C. The effect of these pre-treatments on the Co/Ge Schottky barrier properties and on the germanide formation is investigated by using different techniques. A strong influence of the pre-treatment is observed. The pre-treatment at 700 °C removes the native oxide but enhances the diffusion of contaminants. After post-metal deposition annealing, the sample pre-treated at 700 °C shows a double layer structure due to interdiffusion, whereas some large isolated islands are present in the sample pre-treated at 400 °C.
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Authors
L. Lajaunie, M.L. David, F. Pailloux, C. Tromas, E. Simoen, C. Claeys, J.F. Barbot,