| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729898 | Materials Science in Semiconductor Processing | 2008 | 5 Pages |
Abstract
Strained Si layers (sSi) on strain-relaxed SiGe buffer layers are frequently used in order to boost up the carrier mobility. This study investigates the degradation of such sSi n-MOSFETs by 20-MeV proton irradiation. The drain current decreases and a negative shift of the threshold voltage is observed after proton irradiation. The impact of the fabrication process of sSi transistors on the degradation is also discussed.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
K. Hayama, K. Takakura, T. Ohtani, T. Kudou, H. Ohyama, A. Mercha, E. Simoen, C. Claeys,