Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729902 | Materials Science in Semiconductor Processing | 2008 | 4 Pages |
Abstract
Density-functional theory is used to model interstitial iron and its complexes with aluminum in Si-rich SiGe alloys with Ge concentration up to 8%. Both short-range and long-range defect-Ge interactions are considered. It is found that Fe prefers Si-rich regions. The shifts of the electrical levels of Fe-acceptor pairs are calculated using the marker method.
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Authors
A. Carvalho, J. Coutinho, R. Jones, M. Barroso, J.P. Goss, P.R. Briddon,