| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 730014 | Materials Science in Semiconductor Processing | 2008 | 7 Pages |
Abstract
Fullerenes C60 were introduced into the GaAs crystal through the dislocation network by means of thermal diffusion. Energy level at 0.34-0.42Â eV above the valence band was identified, which could be related to C60. Interaction between C60 vibration modes and GaAs Debye phonons was evidenced by the measurements of electric parameters. After the thermal treatment, electron mobility had diminished significantly as compared to pure GaAs crystals. This phenomenon was related to the changes in the EL2 level.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Algirdas Mekys, Jurgis Storasta, Algirdas P. Smilga, Justinas Äeponkus, RÅ«ta BariseviÄiÅ«tÄ, Valdas Å ablinskas, Vidmantas Kalendra, Vaidotas Kažukauskas,