| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 730023 | Materials Science in Semiconductor Processing | 2007 | 4 Pages |
Abstract
The processes of Ga2Te3 were studied using X-ray photoelectron spectroscopy, X-ray diffraction and cathodoluminescence methods. It was found, that Ga2Te3 oxidised stepwise with amorphous gallium oxide and tellurium dioxide formed at the beginning followed by crystallisation of Ga2O3 and tellurium trioxide volatility losses. The temperature intervals of intermediate phases existence in own oxide film were established. The similarity in oxidation mechanisms in bulk and on the surface is discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
O.A. Balitskii, V.P. Savchyn,