Optoelectronic properties of ZnSe thin films

ZnSe/Si Schottky diodes were fabricated by the vacuum evaporation technique at different substrate temperatures (303 and 483 K) and the results are discussed. Compositions of the deposited films were measured by Rutherford backscattering analysis. The atomic percentages of Zn and Se were evaluated as 0.50 and 0.50, respectively. Structural analysis shows that deposited films posses good crystalline nature with a cubic structure oriented along the (1 1 1) direction. In the Raman analysis, the presence of the LO mode confirms that the deposited films have the crystalline nature. Photoconduction analyses were performed on the prepared device. The prepared device exhibits a strong photoresponse in the visible region.