Article ID Journal Published Year Pages File Type
732253 Optics & Laser Technology 2013 7 Pages PDF
Abstract

•We report the superior results of UV-laser QWI technique.•The bandgap blueshifts 142 nm without broadening of PL peak.•The application of the UV-laser QWI for device fabrication is presented.•We demonstrate an array of 73 nm blueshifted windows (40 µm×200 μm).•Low threshold current and large blueshifted spectra of FP-lasers are reported.

Large bandgap blueshifts in III–V quantum semiconductor microstructures are achievable with UV-laser induced quantum well intermixing (QWI). We report on the application of the UV-laser QWI technique to investigate bandgap engineering of a compressively strained InGaAsP/InP quantum well laser microstructure. The attractive performance of the technique, determined by the ability of a laser to generate point defects, has been demonstrated with bandgap blueshifts reaching 142 nm, with enhancement of photoluminescence intensity. We have also investigated this technique for post-growth wafer level processing designed for the fabrication of laser diodes.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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