| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 732484 | Optics & Laser Technology | 2012 | 5 Pages |
Abstract
⺠We report on the realization of 1.3-μm InGaAsP BH LDs. ⺠The BH LDs with an AlInAs electron stopper layer (ESL) have high modal gain (Îg0). ⺠The proposed BH LDs also exhibit improved device performance than the normal ones. ⺠The reason for that could be attributed to reduced carrier leakage by AlInAs ESL. ⺠The TO-can packaged BH LDs have potential for use in high-speed data communication.
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Engineering
Electrical and Electronic Engineering
Authors
Chia-Lung Tsai, Chih-Ta Yen, Cheng-Yi Chou, S.J. Chang, Meng-Chyi Wu,