| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 732688 | Optics & Laser Technology | 2011 | 13 Pages |
Abstract
This paper presents a comprehensive review of fundamental issues, device architectures, technology development and applications of HgCdTe based avalanche photodiodes (APD). High gain, above 5×103, a low excess noise factor close to unity, THz gain-bandwidth product, and fast response in the range of pico-seconds has been achieved by electron-initiated avalanche multiplication for SWIR, MWIR, and LWIR detector applications involving low optical signals. Detector arrays with good element-to-element uniformity have been fabricated paving the way for fabrication of HgCdTe-APD FPAs.
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Authors
Anand Singh, Vanya Srivastav, Ravinder Pal,