| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 735249 | Optics and Lasers in Engineering | 2009 | 5 Pages |
Abstract
The rapid recrystallization of amorphous silicon films utilizing excimer laser crystallization (ELC) is presented. The resulting poly-Si films are characterized by Raman spectroscopy. Polycrystalline silicon (poly-Si) films with higher crystallinity can be realized by a dehydrogenation process before ELC. Raman spectra as a function of various excimer laser energy densities are demonstrated. The crystallinity and residual stress of the poly-Si films are determined and discussed.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Chil-Chyuan Kuo,