Rapid prototyping of silicon microstructures by means of a new masking process and crystal orientation dependent etching

Silicon micromachining for MEMS components requires deep etching processes in combination with etch-resistant masks. The usual masking and lithographic procedures are expensive and unsuitable for fast layout changes. We developed a machining possibility, which combines the flexibility of laser direct writing with the shape quality of crystal orientation dependent etching of silicon. The main step is substituting SiO2 or Si3N4 mask layers by etch-resistant metal films. These films can be directly patterned with a laser marking system followed by a well-known etch process in KOH.