Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
736634 | Sensors and Actuators A: Physical | 2010 | 4 Pages |
Abstract
Hemispherical image sensors are very promising technology for cameras, surveillance systems and artificial vision. We report on the electrical performance of the hydrogenated amorphous silicon thin-film transistor passive pixel image sensor (PPS) circuits fabricated on a hemispherical substrate using maskless laser-write lithography (LWL). The level-to-level registration and alignment over the curved surface with a high accuracy are demonstrated for the LWL in this work. The obtained results clearly show that it is possible to realize active-matrix PPS with a 150 μm pixel pitch and a dynamic range of about 40 dB that is suitable for hemispherical image sensors.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Geonwook Yoo, Tze-ching Fung, Daniela Radtke, Marko Stumpf, Uwe Zeitner, Jerzy Kanicki,