Spectrum selective UV detectors from an p-ZnO:As/n-GaN diodes grown by Molecular Beam Epitaxy

In this work, heterojunctions prepared with arsenic doped ZnO films grown on n-type GaN templates by Molecular Beam Epitaxy was obtained. Very good response to ultraviolet light illumination of this structure was observed from photo current measurements. The difference between the dark and bright current was relatively large and it is at about 104. The photodiode was used for UV detector application and the detector showed a highly selective and fast response in UV region.