Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
737522 | Sensors and Actuators A: Physical | 2013 | 7 Pages |
Abstract
This work investigates two silicon (Si) photodiodes (PDs) fabricated in 40 nm standard CMOS technology. The basic structure of the proposed Si PD is formed by N+/P-substrate and N-well/P-substrate diodes. The N+/P-substrate PD demonstrates a responsivity of 0.09 A/W and an electrical bandwidth of 3 GHz for 8 V reverse bias at 520 nm. The N-well/P-substrate PD demonstrates a responsivity of 0.24A/W and an electrical bandwidth of 1.2 GHz for 14.8 V reverse bias at 660 nm. For 520 nm, the N-well/P-substrate PD shows a responsivity of 0.18A/W and an electrical bandwidth of 3.0 GHz for 14.8 V reverse bias.
Keywords
Related Topics
Physical Sciences and Engineering
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Electrochemistry
Authors
M. Atef, A. Polzer, H. Zimmermann,