Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
737555 | Sensors and Actuators A: Physical | 2006 | 5 Pages |
Abstract
A novel sensor array, which is filter-less fluorescence detection sensor, was successfully fabricated using CMOS 5 μm silicon integrated circuit technology. Previously filter-less fluorescence detection sensors were proposed and fabricated, and they were able to sense fluorescence intensity. CMOS image sensor technique was applied for the filter-less fluorescence detection sensor, and it was able to operate a charge accumulation mode. Consequently, it was confirmed that general CMOS image sensor technique can be applied to the novel filter-less fluorescence detection sensor.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Yuki Maruyama, Kazuaki Sawada, Hidekuni Takao, Makoto Ishida,