Article ID Journal Published Year Pages File Type
737795 Sensors and Actuators A: Physical 2012 4 Pages PDF
Abstract

We have successfully fabricated x(0.65PMN-0.35PT)–(1 − x)PZT (xPMN-PT–(1 − x)PZT), where x is 0.1, 0.3, 0.5, 0.7 and 0.9, thick films with a thickness of approximately 9 μm on platinized silicon substrate by employing a composite sol–gel technique. X-ray diffraction analysis and scanning electron microscopy revealed that these films are dense and creak-free with well-crystallized perovskite phase in the whole composition range. The dielectric constant can be controllably adjusted by using different compositions. Higher PZT content of xPMN-PT–(1 − x)PZT films show better ferroelectric properties. A representative 0.9PMN-PT–0.1PZT thick film transducer is built. It has 200 MHz center frequency with a −6 dB bandwidth of 38% (76 MHz). The measured two-way insertion loss is 65 dB.

Related Topics
Physical Sciences and Engineering Chemistry Electrochemistry
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