GaN UV MSM photodetector on porous β-SiC/(1 1 1)Si substrates

This paper reports the GaN thin films grown on Si substrates by MOCVD with different buffer layers, i.e., cubic β-SiC and porous β-SiC (PSC). The β-SiC thin films were prepared with RTCVD, while the PSC thin films were fabricated by electrochemical anodization method on cubic β-SiC thin films, as well as the PL spectrometer, HRXRD and SEM were employed to analyze the samples.Furthermore, a metal–semiconductor–metal (MSM) photodetectors using GaN films grown on β-SiC/Si and porous β-SiC/Si were developed. For GaN/PSC/Si, we found a very high photo/dark current ratio of 2427.23, which is about 60 times the value of GaN/β-SiC/Si, thus evidenced the PSC indeed can help low leakage current and high-quality GaN thin films grown on Si substrates.