A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications

A novel n-SiCN/p-SiCN homojunction was developed on Si substrate for low cost and high temperature ultraviolet (UV) detecting applications. The current ratio of the junction under −5 V bias, with and without irradiation of 254 nm UV light are 1940 and 96.3, at room temperature and 175 °C, respectively. Compared to the reported UV detectors with material of 4H-SiC or β-SiC, the developed n-SiCN/p-SiCN homojunction has better current ratio in both room and elevated temperature.