Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
737931 | Sensors and Actuators A: Physical | 2011 | 10 Pages |
Abstract
The paper describes a new design-oriented compact model for horizontal Hall effect devices. This model is based on the physics of semi-conductor and is simplified according to some assumptions verified through experimental results and/or numerical simulations. Compared to existing models, it has the advantage to take most of the first-order effects into account while allowing fast simulations. A procedure to extract the parameters of the model is given and simulation results are compared to experimental data measured on a cross-shaped sensor designed in a standard 0.35 μm CMOS technology. The maximum error between simulation results and experimental data is less than 1%.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
M. Madec, J.B. Kammerer, L. Hébrard, C. Lallement,